| 摘要 |
PURPOSE:To enable to manufacture a single crystal layer of large area and high quality by a method wherein power is supplied to the second light-emitting part from the the power supply means of a plurality of system, and the power supply means are controlled based on the wafer temperature measured by a controlling device. CONSTITUTION:Power is separately supplied to substrate heating tubular lamps 32a and 32b, and 32b and 32c respectively from substrate heating tubular lamp power sources 33 and 34. The light emitted from the lamps 32a, 32b, 32c and 32d are made to irradiate on the whole surface of a wafer retaining plate 36, the plate 36 is heated up, and the silicon substrate of a wafer 30 is also heated up. At this time, power sources 33 and 34 are controlled by a controlling device 37 based on the thermoelectromotive force fed back from a temperature sensor 35, and the power supplied to the lamps 32a and 32b and 32c is properly controlled. Consequently, as the temperature distribution in tubular direction of the fused band forming rubular lamp 31 of the silicon substrate on a sample wafer 30 can be easily maintained at optimum temperature distribution, the single crystal layer of large area and high quality can be manufactured.
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