| 摘要 |
PURPOSE:To improve the fill factor by doping a p-type dopant only at near the n/i interface of an i-layer. CONSTITUTION:The manufacturing apparatus consists of three reaction chambers 11, 12, and 13. The silane gas is introduced from a gas cylinder 21 into a p- chamber 11, and diboron gas from a gas cylinder 22, and glow electric discharge is generated on counter electrodes 31 and 32 to form a p-layer 3 on the glass substrate 1 which is coated with a transparent conductive electrode film 2. Then, the substrate 1 is transferred to the chamber 12 which is then, supplied with silane gas to grow an i-layer 4 with the glow electric discharge decomposition. Then, the substrate is transferred to the chamber 13 in which silane gas and phosphine gas are supplied to grow an n-layer 5. |
