发明名称 DEPOSITED FILM FORMING METHOD
摘要 PURPOSE:To improve the various characteristics of a film, a high speed film formation, reproducibility and uniformity of film quality by feeding an active seed made of germanium and halogen and an active seed made of an oxygen- containing compound, and making thermal energy act to chemically react them. CONSTITUTION:An Al cylinderlike base 211 is hung in a film forming chamber 201. Solid Ge particles 204 are filled in an activating chamber 202, GeF4 is blown through a guide tube 205 while heating to form an active seed GeF2, and then fed through a guide tube 206 to the chamber 201. Mixture gas of O2, Si2F6, H2 is fed from a guide tube 217-1 to an activating chamber 220, activated by a microwave plasma generator 221, and fed to the chamber 201. The base 211 is heated, rotated, emitted by a light energy from 1kW Xe lamp, evacuated from an exhaust valve 212 to form a photosensitive layer as a drumlike electrophotographic image forming member.
申请公布号 JPS61194825(A) 申请公布日期 1986.08.29
申请号 JP19850035608 申请日期 1985.02.25
申请人 CANON INC 发明人 ISHIHARA SHUNICHI;ONO SHIGERU;KANAI MASAHIRO;ODA TOSHIMICHI;SHIMIZU ISAMU
分类号 C23C16/30;C23C16/22;C23C16/48;G03G5/08;H01L21/205;H01L31/04 主分类号 C23C16/30
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