| 摘要 |
PURPOSE:To prevent a resistance value from being increased by an oxide film by a method wherein upper and lower electrode layers, which are to be connected to each other, are connected to a diffusion layer. CONSTITUTION:An electrode layer 6d is connected to a collector diffusion layer N<+> of a transistor through a pierced hole of the 1st insulation layer 4. The 2nd insulation layer 8 is formed over electrode layers 6a, 6b and 6d. An electrode layer 10 is connected to the diffusion layer N<+> through a thru-hole 8a and a piercing hole 6e of the electrode layer 6d. With this constitution, even if an aluminum oxide film is formed on the electrode layer 6d, the electrode layer 6d maintains satisfactory electrical contact with the electrode layer 10 through the diffusion layer N<+>. Therefore, increase of a resistance value due to the oxide film is avoided. |
