| 摘要 |
PURPOSE:To produce simply and reproducibly BH laser with excellent performance by a method wherein an active region formed at mesa-striped shape is coated by a semiconductor thin layer and periphery thereof is buried by a heat-resistant resin. CONSTITUTION:An active region 11 formed at mesa-striped shape is coated by a semiconductor thin layer 12, additionally periphery thereof is buried by a heat-resistant resin 13. Refractive index of the semiconductor thin layer 12 and the heat-resistant resin 13 are selected to be smaller than that of a laser active layer 16. Thereby, laser light is enclosed effectively to inside the laser active layer 16 the same as normal BH laser. The electric current flowing to the laser is restricted only inside the active region 11 owing to insulation of the heat-resistant resin 13.
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