| 摘要 |
PURPOSE:To realize a large area of a deposited film containing nitrogen while improving its various characteristics, speed of film formation and reproducibility and making quality of the film uniform by a method wherein particular activated seeds which are activated separately beforehand in spaces different from a film forming space are brought into chemical reaction. CONSTITUTION:An activated seed produced by decomposing a compound containing germanium and halogen and an activated seed produced from a nitrogen containing compound for film formation are separately introduced into a film forming space where a deposited film 10 is formed on a substrate 11. The deposited film 10 is formed on the substrate 11 by chemical reaction between those two activated seeds. The deposited film 10 formed with this method does not get harmful influence from etching, abnormal discharge or the like. Moreover, the temperature of the substrate 11 can be kept much lower while the deposited film 10 is being formed so that the deposited film 10 with stable quality can be mass-produced industrially and supplied with low cost. |
