| 摘要 |
PURPOSE:To suppress the short channel effect by providing an oxygen injection layer under the channel region. CONSTITUTION:A mask 10 is provided on a semiconductive GaAs substrate 1 and ions are implanted to form an active layer 6. Then, oxygen ions are implanted to form an oxygen injection layer 5 under an active layer 2 where a channel region 4 is to be formed. Then, a gate metallic layer 11, a SiO2 film 12, and Ti/Ni layer 13 are formed. Then, the W-Al layer 11 and the film 12 are etched with the layer 13 as a mask. Then, the layer 13 and the film 12 are removed to form source and drain electrodes by coating ohmic metal 7 and 8. |
