| 摘要 |
PURPOSE:To reduce TON time without producing an after-image and to perform image pick-up operation without stopping a clock by a method wherein an electric field which pushes the electric charge in the direction of the charge transfer element is formed within the charge storage section. CONSTITUTION:An electric field-formation means which forms the electric field that pushes the charge in the direction of the charge transfer element 5 is provided within a charge storage section 3 and a transfer gate 4 of a solid-state image pick-up device. This charge-formation means is formed with the fact that the channel width W of the N-type diffusion layer 12 in the charge storage section under the storage gate electrode 3 differs from the width W1 adjacent to a photo-electric conversion element and the width W2 adjacent to a transfer gate 4, and the channel width is gradually widened in the direction of the charge transfer element. According to this fact, an electric field that pushes the charge in the direction of the charge transfer element 5 is present within the charge storage section 3, and the high level is applied to phiTG so that the transfer speed at the time when the signal charge is fed from the charge storage section 3 to the charge transfer element 5 is faster than that in the case of the heat diffusion because of the transfer conducted by the electric field. |
