| 摘要 |
PURPOSE:To prevent a peak of potential from being formed nearby an ion implantation boundary and eliminate malfunction, and to transfer a fine bubble smoothly at a connection part by providing the ion implantation boundary nearby the tip part of a 'Permalloy(R)' pattern. CONSTITUTION:When the width of the strip magnetic domain of a bubble material in use is denoted as (w), an ion implantation boundary is provided nearby the tip part of the 'Permalloy(R)' pattern within a range where distances x1 and x2 measured from another ion implantation boundary in two 90 deg. different directions are both shown by an expression. Consequently, a bubble with a small diameter is transferred excellently where the ion implantation path and 'Permalloy(R)' transfer path of a composite element are connected together.
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