| 摘要 |
PURPOSE:To reduce leakage current by a method wherein a clad layer of a BH-type semiconductor laser is element connected electrically with a buried layer thereof through an anode electrode. CONSTITUTION:A buffer layer 2 constituted of an n<-> type semiconductor is formed on an n<-> type semiconductor substrate 1, and thereon a strip active layer 3, which emits laser light from an edge face, is formed. A clad layer 4 constituted of a p-type semiconductor is formed on the active layer 3, and at both sides thereof blocking layer 6 constituted of a p-type semiconductor is formed. Additionally, a buried layer 7 constituted of an n-type semiconductor and an ohmic contact layer 12 getting to the clad layer 4 in the midst of thickness are formed. A part of an electrode 10 provided on the ohmic contact layer 12 is subjected to contact with the buried layer 7.
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