| 摘要 |
PURPOSE:To improve performance by forming a buried-layer removing section along a groove to a buried layer having a conduction type reverse to a substrate and burying the removing section by a buried layer having a conduction type the same as the substrate. CONSTITUTION:An silicon dioxide (SiO2) film 9 with opening sections for forming grooves in double channels in parallel with a striped light-emitting section is laminated on a substrate to which a double hetero-junction consisting of InGaAsP is shaped. Double channel sections 10 are formed through etching by Br-methanol while using the silicon dioxide film 9 as a mask. P-InP 7 is buried, the grooves 11 are shaped to the bottom section of the InP layer 7 while employing the silicon dioxide film 9 as a mask, and N-InP layers 12 are grown. The silicon dioxide film 9 is removed, an electrode contact section is removed newly and an silicon dioxide film 13 is grown as an insulating film, and a P electrode 5 and an N electrode 6 are formed. Accordingly, P-N-P junctions are shaped even to leakage currents passing in the lateral direction through the channel sections, thus preventing leakage currents. |
