| 摘要 |
PURPOSE:To eliminate malfunction and to transfer a fine bubble smoothly at a connection part by preventing a peak of potential from being formed nearby an ion implantation boundary by utilizing the repulsive magnetic pole of a 'Permalloy(R)' pattern. CONSTITUTION:A 'Permalloy(R)' pattern 9 is put closely to the ion implantation boundary separately from a 'Permalloy(R)' pattern 2. Namely, when an in- surface magnetic field is established, a repulsive magnetic pole is formed in the 'Permalloy(R)' pattern 9 at the side of the ion implantation side. A bubble becomes easy to move beyond the ion implantation boundary 5 because of the influence of the repulsive magnetic pole. The 'Permalloy(R)' pattern 9 is provided at a position shown by an expression, where X is the shortest distance between the ion implantation boundary and 'Permalloy(R)' pattern 9 and W is the width of the strip magnetic domain of a magnetic medium is use. Consequently, a bias magnetic field margin of >=10% is obtained.
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