| 摘要 |
<p>PURPOSE:To obtain a magnetooptic storage element having high reproduction signal quality and recording sensitivity by forming a reflective film layer of an alloy of aluminum added with an element to decrease thermal conductivity. CONSTITUTION:A transparent aluminum nitride film 6 which is the 1st transparent dielectric film is formed to, for example, 100nm film thickness on a transparent substrate 1 consisting of glass, polycarbonate, acryl, etc. A thin GdTbFe alloy film 3 which is a thin rare earth transition metal alloy film is formed to, for example, 27nm film thickness on the film 6. A transparent aluminum nitride film 7 which is the 2nd transparent dielectric film is formed to, for example, 35nm film thickness on the film 3. An aluminum nitride film 8 obtd. by sputtering a target consisting of aluminum added with nickel is further formed as the reflective film to, for example, >=30nm film thickness on the film 7.</p> |
