发明名称 LOW-PRESSURE TRANSFER MOLD FOR MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve the product yield by providing a resin well pot in the through-gate portion between the product cavities, thereby preventing a void from biting the product. CONSTITUTION:A resin well pot 15 is provided in a through-gate portion 11. With this, the air seized in the encapsulating resin becomes a void at the through-gate portion 11. However, since the apparent through-gate volume increases, the air is trapped in the resin well pot 15.
申请公布号 JPS61194730(A) 申请公布日期 1986.08.29
申请号 JP19850033884 申请日期 1985.02.22
申请人 NEC CORP 发明人 SAWAKI HISASHI
分类号 B29C45/14;B29C45/32;B29C45/34;B29K105/20;B29L31/34;H01L21/56 主分类号 B29C45/14
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