| 摘要 |
PURPOSE:To enhance the flatness of Al layer, by forming the Al layer which buries only the window hole on the oxide film covering the surface of substrate, coating the whole surface with the polyimide system resin which buries step differences, connecting the Al layer through the window hole of the resin film, and forming the wiring of Al layer on resin. CONSTITUTION:On the silicon oxide film 17, the hole 18 is made by applying the photo resist 19. After Al-Si is deposited by vapor phase epitaxy, the photo resist 19 is eliminated and the Al-Si film 20 is left only in the hole 18. On the whole surface, polyimid system resin is spread to form the coating film 21, on a part of which the through hole 22 is made. On the whole surface, Al is evaporated and connected to the Al-Si film 20a by photo etching. Thus, the Al wiring 23 is formed. Next, polyimide system resin is spread on the whole surface and the coating film 24 is formed, on which the through hole 25 is made by photo etching. Through the through hole 25, the Al wiring is connected, and the Al wiring 26 is formed on the interlaminar polyimide film 24. Thus, the patterning of wiring is excellently performed and fine wiring is made available. |
