发明名称 DEPOSITED FILM FORMING METHOD
摘要 PURPOSE:To uniformly form a deposited film on a base of large area by chemi cally reacting an active seed A produced by decomposing a compound which contain a carbon and a halogen with an active seed B produced by a silicon- containing compound by discharge energy. CONSTITUTION:A base 211 is placed in a film forming chamber 201, the chamber is evacuated from an exhaust valve 212 while heating by a heater 208, an active seen A is fed from a guide tube 206, an active seed B is fed from a guide tube 217, discharge energy is applied by a discharge energy generator 218 to chemi cally react the seeds A, B to form a deposited film on the base 211. The seed A is produced by heating solid carbon in the chamber 202, and blowing a com pound which contains carbon and halogen. The seed B is produced by feeding silicon-containing compound in an activating chamber 219 to activate a micro wave plasma generator 220.
申请公布号 JPS61194819(A) 申请公布日期 1986.08.29
申请号 JP19850035602 申请日期 1985.02.25
申请人 CANON INC 发明人 ISHIHARA SHUNICHI;ONO SHIGERU;KANAI MASAHIRO;ODA TOSHIMICHI;SHIMIZU ISAMU
分类号 C23C16/24;C23C16/511;G03G5/08;H01L21/205;H01L31/04 主分类号 C23C16/24
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