| 摘要 |
PURPOSE:To easily thin films each having a good film thickness distribution on wafers in the stage of forming the thin films by a vacuum deposition or sputtering method on the surface of the wafers by supporting finely adjustably the holders of the wafers to jigs and adjusting the angle relative to the flying loci of film forming particles. CONSTITUTION:A target 4 for thin film formation is placed on a cathode plate 5 in a vacuum chamber 1 or an evaporating source for thin film formation is placed in place of the target in said chamber. Plural pieces of the wafer holders 3 are attached to the plural bowl-shaped forming jigs 2 as the anode. An Ar or O2 atmosphere gas is introduced into the chamber 1 to form the thin film consisting of a desired compd., etc. on the wafers 13 by the sputtering or vacuum deposition method. While the jigs 2 are rotated around the axis P, the jigs are revolved around the central axis Q and the attaching angles of the holders 3 relative to the jigs 2 is adjusted by means of adjusting screws 18, by which the free change of the angle of the particles for the thin film with the flying loci is made possible. The thin film forming device which can deal easily with the change of the film thickness distribution is obtd.
|
