CHEMICAL VAPOR DEPOSITION DEVICE

摘要

PURPOSE:To form hybrid films having a uniform compsn. on substrates in a CVD device provided with the perpendicular 1st gas pipe for supplying a gaseous raw material and the 2nd gas pipe in parallel with the substrate surface by forming the 2nd gas pipe into specifically constructed double pipes. CONSTITUTION:The CVD device disposed with a rotary quartz plate 1 attached with the plural substrates 5 between a quartz plate 3 and a heater 4 is put into a vacuum vessel. The 1st gas pipe 2 is provided through the center of the quartz plate 3, the rotary quartz plate 1 and a heater 4 and a reactive gas such as O2 and silane is ejected together with a carrier gas such as Ar from the ejection ports provided to the side face of the pipe. A gaseous raw material such as dimethyl zinc is ejected together an inert gas such as Ar atop the substrates 5 from the 2nd gas pipe 8 supported horizontally in the radial direction between the plate 3 and the plate 1. The 2nd gas pipe 8 is constituted of an inside pipe 8-2 for supplying the gaseous raw material and carrier gas and an outside pipe 8-3 having the slit-shaped ejection ports in the longitudinal direction on the bottom surface. the hybrid films having the uniform compsn. of ZnO and SiO2 are formed with good reproducibility on the substrate 5.