ALLOY FILM FORMING METHOD

摘要

PURPOSE:To make the formation of an alloy film having different compsn. ratios from an alloy target having one compsn. ratio in the stage of using the alloy target and forming possible by sputtering the alloy film on the surface of a work by moving and adjusting the position of plasma. CONSTITUTION:Gaseous Ar is introduced under the specified pressure through an introducing port 12 into a vacuum vessel 10 the inside of which is evacuated to a high vacuum by a vacuum pump 11. A negative voltage is impressed to a sputtering electrode 14 to generate the plasma near the Si-Mo alloy target 15. A plasma group 18 is formed by a magnetic field 17 of a magnetic field varying device 13 by an electromagnet and the diameter (d) thereof is changed to change the size of the plasma group to the size at which the alloy film of the prescribed compsn. ratio is formed on the work 16. The alloy film having the different compsn. ratios can be formed on the surface of the work 16 even from one alloy target and therefore the formation of the alloy film having the prescribed Si-Mo compsn. ratio is made possible by using the alloy target having the optional Si-Mo ratio.