发明名称 SPUTTERING DEVICE
摘要 PURPOSE:To make the high-speed embedment of fine grooves and the high-speed formation of a flattened film in a sputtering device possible by combining a microwave and magnetic device to generate high-density plasma and impressing electric power to a substrate to be worked as well. CONSTITUTION:The substrate 2 to be worked is imposed on a holder 19 in a vacuum chamber 6 and the target 1 is disposed to face the substrate. A cathode 4 is disposed to contact tightly with the rear thereof and further an anode 7 is disposed on the outside periphery of the cathode 4 and an insulator 5 of a vacuum chamber 6. A cavity 10 is provided in the central part 10 of the target 1 and a plasma generating chamber 11 connected to a microwave generator 18 is installed therein. High-frequency electric power is impressed from a power source 26 to the substrate holder 19. The microwave from the generator 18 enters the chamber 11 where plasma is generated by the static electric field generated by the magnetic device 17 so as to collide against the surface of the target 1 and to form the film of the target material at a high speed on the surface of the substrate 2. The fine grooves are also formed on the flat surface at a high speed.
申请公布号 JPS61194174(A) 申请公布日期 1986.08.28
申请号 JP19850032604 申请日期 1985.02.22
申请人 HITACHI LTD 发明人 SAITO YUTAKA;SUZUKI YASUMICHI;SANO HIDEZO;SHIMIZU TAMOTSU;AIUCHI SUSUMU
分类号 C23C14/36;C23C14/35;H01L21/31 主分类号 C23C14/36
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