| 摘要 |
PURPOSE:To prevent occurrence of white dot defects even if there exist pinholes in the photo semiconductor layer, by paralleling approximately the electric field in the direction of the principal plane of the layer. CONSTITUTION:On a planar substrate 10, an image pickup cell array 12 is formed to constitute a solid state color image pickup device. On the substrate 10, two photo semiconductor layers 16, 18 are laminated in this turn. Among them, insulating layers 46, 48 are interlaid respectively, the semiconductor layer 16 generating photo charges by sensing green G light and light with a shorter wavelength than it, and the semiconductor layer 18 by sensing light with a wavelength of blue B. Electrode conductors 20, 22 are deposited on one faces of the semiconductor layers 16, 18 and island-shaped electrode conductors 26, 28 are formed on the other faces in correspondent to each image pickup cell. the switching device 30 switches the G component of an image signal and the switching device 32 the B component, and the photo diode 34 formes the image signal responding to the R component of the incident light, a set of them corresponding to a pixel of a reproduced image.
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