| 摘要 |
PURPOSE:To form a single crystal semiconductor layer with larger space and even quality while improving the evenness of temperature distribution by a method wherein polycrystalline semiconductor double layers recrystallized during the single crystal growing process are formed on an insulating layer. CONSTITUTION:A polycrystalline silicon layer 22 is formed as the first semiconductor layer 3,500Angstrom thick to form a semiconductor device after recrystalization while another polycrystalline silicon layer 24 is formed as the second semiconductor layer 7,000Angstrom thick for controlling thermal distribution. These two polycrystalline silicon layers 22, 24 radiate over respective overheated region efficiently to avoid any drop phenomenon due to an exforiation of coated layer or decline in surface tension in the melted state resulting from over heating apt to happen in any conventional structure. Besides, a recrystallized layer with excellent quality due to even temperature distribution may be formed on a substrate with the diameter size exceeding 3 inches or equivalent. |
