| 摘要 |
PURPOSE:To realize a semiconductor device quipped with elements of excellent characteristic without adding any complicated steps to the ordinary manufacturing process by a method wherein annealing is accomplished after the formation of an interlayer insulating film by means of bias spattering. CONSTITUTION:The withstand voltage between elements is greatly lowered after the formation of an interlayer insulating film by means of bias spattering. Subsequent exposure to annealing, however, removes such defects as damage imposed on groundwork elements or stress generated within an interlayer insulating film, as the result of which a high withstand voltage is recovered between elements. An excellent result is attained when the process is accomplished in an atmosphere with its temperature maintained at 350-500 deg.C. The best result is attained when an atmosphere is used consisting of nitrogen, hydrogen, an inert gas such as argon, or their combination. |
