| 摘要 |
PURPOSE:To enable to form a metal thin film containing crystal grains of a fine crystal grain diameter on the substrate in the vacuum tank with good reproducibility by a method wherein a trace amount of gas having a reactivity is introduced in the vacuum tank during the previously prescribed period in midway of the process, wherein the metal thin film is made to grow on the substrate. CONSTITUTION:Firstly, a silicon wafer 4 is put on an anode electrode 3 and an Al thin film 6' goes being formed on the silicon wafer 4 by performing a sputtering of Al using Ar gas. Then, during the previously prescribed period in midway of this sputtering, a vacuum valve 11 is sporadically opened to intro duce a trace amount of O2 gas in a vacuum tank 1. By the introduction of this O2 gas, reaction layers (an Al2O3 is the main constituent matter thereof) 14 and 14', which are made to generate by a reaction of the Al to the O2 gas, are formed in the surface of the Al thin film 6' and the growth of crystal grains 12' of Al is obstructed. As a result, the crystal grains 12' are not made to growth to a height higher than each height of the reaction layers 14 and 14' and the fine crystal grains 12' are formed in the Al thin film 6'. |
