发明名称 FORMATION OF DEPOSITED FILM
摘要 PURPOSE:To attain enlargement, improvement of productivity and mass production of the title films by a method wherein an active compound containing silicon and halogen as well as another compound produced from a chemical filming material are separately fed to a filming space to be supplied with discharging energy. CONSTITUTION:Under the coexistance of an active compound A produced by decomposing a silicon and halogen contained compound as well as another active compound B from a chemical filming material, said active compounds are chemical-reacted by means of discharging energy to form the title deposited films. A gaseous or easily gasified compound such as e.g. SiF4 etc. may be recommended for the silicon and halogen contained compound. Finally the preferable weight ratio of active compounds A and B may be 8:2-4:6.
申请公布号 JPS61193425(A) 申请公布日期 1986.08.27
申请号 JP19850031581 申请日期 1985.02.21
申请人 CANON INC 发明人 ISHIHARA SHUNICHI;ONO SHIGERU;KANAI MASAHIRO;ODA TOSHIMICHI;SHIMIZU ISAMU
分类号 C23C16/24;G03G5/08;H01L21/205;H01L31/04 主分类号 C23C16/24
代理机构 代理人
主权项
地址