发明名称 |
FORMATION OF DEPOSITED FILM |
摘要 |
PURPOSE:To attain enlargement, improvement of productivity and mass production of the title films by a method wherein an active compound containing silicon and halogen as well as another compound produced from a chemical filming material are separately fed to a filming space to be supplied with discharging energy. CONSTITUTION:Under the coexistance of an active compound A produced by decomposing a silicon and halogen contained compound as well as another active compound B from a chemical filming material, said active compounds are chemical-reacted by means of discharging energy to form the title deposited films. A gaseous or easily gasified compound such as e.g. SiF4 etc. may be recommended for the silicon and halogen contained compound. Finally the preferable weight ratio of active compounds A and B may be 8:2-4:6. |
申请公布号 |
JPS61193425(A) |
申请公布日期 |
1986.08.27 |
申请号 |
JP19850031581 |
申请日期 |
1985.02.21 |
申请人 |
CANON INC |
发明人 |
ISHIHARA SHUNICHI;ONO SHIGERU;KANAI MASAHIRO;ODA TOSHIMICHI;SHIMIZU ISAMU |
分类号 |
C23C16/24;G03G5/08;H01L21/205;H01L31/04 |
主分类号 |
C23C16/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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