| 摘要 |
PURPOSE:To enable to set a gate potential of an FGA and to attain low noise, by connecting the gate of the FGA to the gate of a junction FET. CONSTITUTION:When signal charges QA, QB... are transferred by two-phase clocks phi1, phi2 and reach below the floating gate, the potential of the floating fate is varied owing to electrostatic induction. Since this gate is connected to the gate of a junction type field effect transistor, voltage change results across the resistor 22 of the source follower so as to detect a signal. On an equillbrium state, the potential of the floating gate is equal to the source potential of the junction type field effect transistor and can be freely set by VO, voltage of an external power source 23. The substrate power source voltage VSUB may be larger than the external power source voltage VO. Moreover, low l/f characteristic can be attained, which is an advantage of a junction type field effect transistor. |
