METHOD OF FORMING A WIDE DEEP DIELECTRIC FILLED ISOLATION TRENCH IN THE SURFACE OF A SILICON SEMICONDUCTOR SUBSTRATE,申请号EP19820111305-传众专利搜索

发明名称	METHOD OF FORMING A WIDE DEEP DIELECTRIC FILLED ISOLATION TRENCH IN THE SURFACE OF A SILICON SEMICONDUCTOR SUBSTRATE
摘要
申请公布号	EP0084635(A3)	申请公布日期	1986.08.27
申请号	EP19820111305	申请日期	1982.12.07
申请人	INTERNATIONAL BUSINESS MACHINES CORPORATION	发明人	CHU, SHAO-FU;HO, ALLEN PANG-I;HORNG, CHENG TZONG;KEMLAGE, BERNARD MICHAEL
分类号	H01L21/76;H01L21/302;H01L21/3065;H01L21/31;H01L21/3105;H01L21/311;H01L21/762;(IPC1-7):H01L21/76	主分类号	H01L21/76
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