| 摘要 |
The collector and collector contact of a lateral transistor surround the emitter region which is contacted by an electrode passing over the collector contact on an insulating layer. The lateral transistor may include a plurality of emitter regions 19 formed in a matrix in a semiconductor layer, a mesh- shaped collector region 20 enclosing each of the emitter regions, a first layer collector electrode 26 formed along the mesh-shaped collector region 20, and a second layer emitter electrode 30 overlying the mesh-shaped collector electrode and connecting the emitter regions in common. The collector electrode 26 thus contacts the collector region 20 all the way around each emitter region 19, so its collector saturation resistance is reduced. The transistor is effective especially as an audio power transistor. <IMAGE> |
