发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 A one-chip IC device has a plurality of IC-chip equivalent regions which have substantially the same patterns and functions as those of ICs whose functions are already evaluated and proven. The device has intra-region wiring layers in the IC-chip equivalent regions. The device also has external lead contacts which have been used as bonding pads of the original ICs, in addition to outer bonding pads. Second wiring layers are connected between the external lead contacts and between the external lead contacts and the outer bonding pads.
申请公布号 EP0127100(A3) 申请公布日期 1986.08.27
申请号 EP19840105778 申请日期 1984.05.21
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SHIOTARI, YOSHIHISA C/O PATENT DIVISION;NAGAO, KENICHI C/O PATENT DIVISION
分类号 H01L23/528;H01L27/02;(IPC1-7):H01L27/02;H01L23/52 主分类号 H01L23/528
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