USE OF A FIELD EFFECT TRANSISTOR HAVING A DUAL GATE AND AN INTERMEDIATE OHMIC ISLAND FOR THE REJECTION OF A FREQUENCY BAND

摘要

PHF 82-514 11 The invention relates to the novel use of a known component, i.e. a dual gate field effect transistor having an intermediate ohmic island between the two transistor halves as an amplifier-mixer for rejecting a frequency band. According to the invention, a series resonant circuit comprising an inductance and a capacitor (LC) is connected through one of its ends to the ohmic island of the field effect transistor and through the other end to earth, while moreover polarization voltages are applied to each electrode of the dual gate transistor so that the first half or part of the transistor extending from the source electrode to the ohmic island is brought into a state of saturation and that the second part of the transistor extending from the ohmic island to the drain electrode is brought into a state of non-saturation.