| 摘要 |
PURPOSE:To reduce an effect by alpha-rays, and to prevent a soft error of a memory, etc. by applying or adding a compound of lead or thallium onto a semiconductor chip or containing it in a resin material and sealing the chip. CONSTITUTION:The liquid obtained by mixing silica gel into a solution such as a thallium formic acid aqueous solution and uniformly dissolving the gel is applied onto the wafer 11, to the inside thereof a P-N junction 13, etc. are formed, to which electrode wiring 14 is executed through a SiO2 film 12 and which is coated with a protective film 15. The whole is heated at approximately 400 deg.C and an applying layer is changed into a SiO2 film 16 containing Ta, and the whole is sealed with resin or enclosed into a case. Or a mixed liquid of a solution such as the thallium formic acid aqueous solution and a silicon resin liquid is dropped onto the chip 21, which is fixed onto a case substrate 22 through a metallic layer 23 and connected by wires 24, to coat the chip, and the temperature of the resin film 25 is elevated and the film is solidified. Accordingly, since the substance having large radiation stopping power is uniformalized and shaped onto the chip as the film, radiation is damped, and malfunction can be prevented. |
