发明名称 |
Lithium counterdoped silicon solar cell |
摘要 |
The resistance to radiation damage of an n+p boron doped silicon solar cell is improved by lithium counterdoping. Even though lithium is an n-dopant in silicon, the lithium is introduced in small enough quantities so that the cell base remains p-type. The lithium is introduced into the solar cell wafer 10 by implantation of lithium ions whose energy is about 50 keV. After this lithium implantation, the wafer is annealed in a nitrogen atmosphere at 375 DEG C. for two hours.
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申请公布号 |
US4608452(A) |
申请公布日期 |
1986.08.26 |
申请号 |
US19840669140 |
申请日期 |
1984.11.07 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE ADMINISTRATOR OF THE NATIONAL AERONAUTICS AND SPACE ADMINISTRATION |
发明人 |
WEINBERG, IRVING;BRANDHORST, JR., HENRY W. |
分类号 |
H01L31/0288;H01L31/068;H01L31/18;(IPC1-7):H01L31/06 |
主分类号 |
H01L31/0288 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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