| 摘要 |
The present invention relates to methods of forming a charge-coupled device (CCD) image sensor which includes in a substrate of semiconductor material a plurality of parallel channel regions, a channel stop region between alternate pairs of adjacent channel regions, a blooming drain region in the channel stop region between the other alternate pairs of adjacent channel regions and a blooming drain barrier region around each blooming drain. The positions of the channel stop regions, the blooming drain regions and the blooming drain barrier regions are defined by a masking layer having openings therethrough and the channel stop regions, blooming drain regions and blooming drain barrier regions are formed by embedding ions of an appropriate conductivity modifier into the substrate through the openings in the masking layer. The channel stop regions may be defined at the same time as the blooming drain barrier regions or at the same time as the blooming drains so as to provide accurate spacing between the blooming drain barrier regions and the channel stop regions. The channel stop regions and the blooming drain barrier regions are all formed simultaneously and the blooming drain regions are formed simultaneously but separately from the channel stop regions and the blooming drain barrier regions.
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