| 摘要 |
The new kind of field effect transistor having a non-saturating characteristic, i.e. static induction transistor (SIT), proposed by the present inventor is modified to serve as a substitute of any conventional bipolar transistor in a given circuitry. That is, the gate-to-gate distance and the impurity concentration of the channel region of an SIT are so selected that the channel is pinched off by the depletion layer at a predetermined forward gate bias. When the forward gate bias applied is below a certain level, the drain current will increase fundamentally exponentially with an increase of the drain voltage above some threshold voltage, whereas when the gate bias applied is above the certain value, the drain current will increase rapidly with a small increase in the drain voltage.
|
