| 摘要 |
A hydrogen-selective gas sensor comprising a gas-sensing element including a semiconductor in a principal portion thereof, and a thin coat or layer inactive for oxidation of hydrogen formed over an entire surface of the gas-sensing element or at least on a surface of the semiconductor. The thin layer comprises one of silicon oxide, aluminum oxide, and silicon nitride, and is formed on the surface of the semiconductor by chemical deposition, the thin layer checking passage of molecules other than hydrogen molecules.
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