| 摘要 |
PURPOSE:To omit a process of plating or ion plating required on the preparation of a conventional lead frame by using an aluminum lead frame and directly bonding an aluminum wire with the lead frame. CONSTITUTION:Al is employed as a lead frame, an Si chip is bonded with the lead frame with Ag paste, and Al and an Al-1.5%Mg-1%Pd alloy wire having a 30mum diameter are ball-bonded at a frame temperature of 80-110 deg.C and in bonding load of 100g or more. The whole is molded at 120-170 deg.C by using epoxy resin, and thermoset at 150-200 deg.C. Consequently, since there is no dissimilar metallic junction in a resin molded semiconductor element pre pared, corrosion by the local battery action of a dissimilar metallic junction is not generated, thus improving the wet-proof reliability of the element. Al-10-15%Si-0.5-3%Cu-0.5-3%Mg-0.5-3%Ni, etc. are desirable as the lead frame. |
