| 摘要 |
PURPOSE:To suppress leaking currents on the surface of a photovoltaic type infrared-ray detecting element, by heating the surface of a semiconductor by the projection of light, forming vacant grating of Hg in the surface of the substrate, an forming a P<+> layer on the surface of the substrate. CONSTITUTION:A P-type HgCdTe substrate 11 is attached to a substrate holder 12 having a large thermal capacity. The substrate 11 is inputted in a pressure reduced quartz ampul 13. Inactive gas is sealed in the ampul 13 at a low temperature. A light source 14, whose radiation intensity is high, is provided so as to face the substrate 11. Then, vacant grating of Hg are formed in the surface of the substrate 11, and a P<+> layer is formed. Thus the leaking currents on the surface of the photovoltaic type infrared-ray detecting element can be suppressed. |
