| 摘要 |
PURPOSE:To improve the yield and reliability by means of forming the first resist to be utilized as masks for patterning the first insulating film with excellent reproducibility. CONSTITUTION:The first insulating film 20 comprising a silicon oxide film is formed on the surface of a substrate 10 which the second insulating film 21 comprising another silicon oxide film is formed on the backside of the same. A part of the first insulating film 20 is exposed by means of coating the surface of the first insulating film 20 with first resists 30 to be patterned and then overall surface is coated with the second negative type resist. The substrate 10 is turned over to coat the second insulating film 21 with the third resist 32 and the backside is hardened by overall exposure. After the second negative type resist 31 and the third resists 32a are developed and removed, the first insulating film 20 is etched utilizing the first patterned resists 30 as masks. Finally the first and the third resists 30, 32 are peeled off. Through these procedures, impurity regions 40 may be formed by means of normal impurity diffusing process utilizing the first patterned insulating films 20 as masks. |
