| 摘要 |
PURPOSE:To enable to form high-precision resist patterns having a good dry etching resistance by a method wherein the dry etching resistance of the coated layer is specified. CONSTITUTION:A polymethyl methacrylate film is applied on the substrate to be treated, whereon a polycrystalline Si film A is formed, as a resist having a high-resolving power and a slightly weak dry etching resistance, a pattern is drawn using an electron beam drawing device and a developing is performed, whereby inversion resist patterns 12 are formed. Successively, a polysiloxane layer is applied as a coated layer 3, which is superior to the inversion resist patterns 12 in a dry etching resistance, to form the resist film. After this, a baking treatment is performed and the surface of the coated layer 13 is flattened. When a reactive ion etching is performed using SF6, the inversion resist patterns 12 are brought into a state that the surfaces thereof are made to expose. Furthermore, a reactive ion etching is performed using oxygen gas as the etching gas and parts of the polycrystalline Si film A are selectively removed, thereby enabling to obtain the high-precision polycrystalline Si patterns A'. |
