| 摘要 |
PURPOSE:To improve film property and forming film speed and to uniformalize quality thereof by a method wherein an active genus obtained from compound including germanium and halogen, and the active genus obtained from compound included Si are introduced to forming film space and an optical energy is projected thereto. CONSTITUTION:A substrate 103 is placed on a support 102 inside a forming film chamber 101 and is heated by a heater 104. An Si5H10 gas etc. is introduced to inside activation chamber 123 from a gas cylinder for supplying 106 and active genus B is created by means of activation by microwave plasma generator 122. On the other hand, an active seed A of a GeF*2 seed is created by means that after an activation chamber 112 is filled up with solid Ge grains 114 and is heated by an electric furnace 113 and then is blown into GeF4. These active genuses A, B are introduced to the forming film chamber 101 and are irradiated by light of an optical energy generator 117. As the result, the active genuses A, B are made to perform chemical reaction, then a deposited film is formed on the substrate 103. |
