| 摘要 |
PURPOSE:To prevent the element of the lower layer from being damaged by a method wherein the upper silicon layer is formed in the thickness with which the quantity of optical energy projected in the prescribed wavelength can be absorbed. CONSTITUTION:The fact that silicon changes remarkably in absorption characteristics by light wavelength is utilized. To be more precise, when the upper layer of polysilicon layer is going to be melted, the absorption characteristics corresponding to the wavelength of the light energy used is calculated taking into consideration of the relation between the light energy to be projected and the thickness of the polysilicon layer which absorbs the light energy, and the upper polysilicon layer is formed in the thickness with which the entire projected energy can be absorbed. As a result, no thermal effect of the thermal energy projected on the upper layer is given to the element of the lower layer. |
