| 摘要 |
PURPOSE:To obtain a distributed feedback type semiconductor laser, wherein leak currents are few even when a large current is injected and high speed modulation is possible, by using Fe added high-resistance InP as an embedded layer for narrowing a current. CONSTITUTION:On an n<+>-InP substrate 21, a diffraction grating 23 is formed. Then non-added InGaAsP 22 is grown on the diffraction grating 23. An Fe- added, high-resistance InP layer 30 is grown on the layer 22. An SiO2 film 27, in which a stripe shaped window (groove) 31 is patterned, is provided. The Fe-added, high-resistance InP 30 is selectively etched. Then the n-InGaAsP layer 22 is selectively etched. In this process, the diffraction grating 23 appears at the bottom of the groove. Then, an n-InGaAsP guide layer 24, a non-added InGaAsP active layer 25, a p-InP layer 26 and p-InGaAsP layer 33 are sequentially grown. Finally, an SiO2 film 32 having a stripe shaped window is deposited. Ti/Pt/Au is formed as a p-type electrode 28 on the film 32, and AuSn is formed as an n-type electrode 29 on the back surface of the substrate. |
