| 摘要 |
PURPOSE:To make it possible to perform super high speed operation of a device, by directly connecting a drain electrode to the active layer of a channel without passing through a compound semiconductor layer having a broad forbidden band. CONSTITUTION:On a semi-insulating compound semiconductor substrate 11, a first conducting type compound semiconductor layer 12 of an active layer is provided. On the semiconductor layer 12, a compound semiconductor layer 13 for a source, which has a forbidden band broader than the semiconductor layer 12, is partially formed. A source electrode 17 is formed on the semiconductor layer 13. A gate electrode 15 is provided on the semiconductor layer 12 adjacent to the semiconductor layer 13. A drain electrode 18 is formed directly on the semiconductor layer 12. Hot carriers, which are injected from the source, are made to pass under the gate electrode 15 at a high speed and injected into the drain electrode 18 still at the high speed. Thus the super high speed operation of the device can be carried out. |
