| 摘要 |
PURPOSE:To increase gains at a time when controlling the state of coupling between superconducting electrodes by applied voltage by changing the distribution of impurity concentration in semiconductor layers forming the superconducting electrodes. CONSTITUTION:When negative voltage is applied to a control electrode 5, the storage layer of positive charges easily extends into a low impurity- concentration layer 3. Consequently, the state of superconductive coupling between a first superconducting electrode 6 and a second superconducting electrode 7 can be changed by a small control signal of approximately 10mV at that time, thus making gains larger than the uniform distribution of an impurity by approximately 2.5-3 times. When positive voltage is applied to the control electrode 5, the inversion layer of negative charges hardly extends at small control voltage. When fixed voltage or more is applied, the inversion layer expands to the low impurity-concentration layer 3 first, and the state of superconductive coupling between the first and second superconducting electrodes 6, 7 begins to change rapidly. Accordingly, a superconductive element having a function of large gains is acquired. |
