| 摘要 |
PURPOSE:To prevent the influence of defect existing on a reticle onto a wafer by a method wherein when exposure is performed using a block reticle for (n) member chips, application is performed to film thickness, which is extinguished by exposure of a resist at (n-1) times but is left by exposure of the resist at (n-2) times. CONSTITUTION:When a resist 12 formed on a wafer 11 is exposed using a block reticle 41 for one - four chips 4, the resist thickness is set up so that said resist comes off and extinguished at three time exposure but does not come off at two time's exposure. At the time of exposure, the reticle 41 is stepped up at (b) distance in X direction and (a) in Y direction and exposure is performed divided by four times at each step. Accordingly, even if a chip 1 is defective and that part is not exposed, the resist 12 is exposed at three times and comes off, then influence by defect is eliminated, if the other chips 2-4 are not defective. |
