| 摘要 |
PURPOSE:To enable to form a thin film containing very little impurity by a method wherein the interior of a reaction-treating device is cleaned and raw gas for reaction and treatment is purified. CONSTITUTION:The following facts: the major constituent elements of a contaminant and an impurity existing in a reaction-treating device and raw gas for reaction and treatment are carbon (C), oxygen (O), fluorine (F), and nitrogen (N), and these elements can be made to bond with elements easy to oxidize, such as iron (Fe), silicon (Si), zinc (Zn), titanium (Ti), molybdenum (Mo) and tin (Sn): are utilized. The contaminant is decomposed and the C, O, F and N to be formed are made to bond with the above-memtioned elements easy to oxidize and are turned into solid-phase substances. By this way, the interior of the device can be cleansed. |
