| 摘要 |
PURPOSE:To obtain a semiconductor devices having an effect of lifetime killer by a method wherein the opening part of the extended tube, which is located on the side of the reaction tube, is blocked and cooling gas is fed into the extended tube. CONSTITUTION:A treating boat 12 is made to shift into the interior of a reaction tube 2 from an extended tube 4 as shown by an arrow E, reaction gas is fed into the reaction tube 2 from the direction shown by an arrow G to perform a treatment of thermal diffusion of gold or platinum, the treating boat 12 is made to transfer to the direction shown by an arrow F and the treating boat 12 is made to again move into the extended tube 4. Then, the reaction tube 2 and the extended tube 4 are separated from each other, and at the same time, cooling gas 20 is fed to jet nozzles 6 from the cooling gas source, the cooling gas 20 is fed into the interior of the extended tube 4 from the jet nozzles 6, and after semiconductor wafers 16 are made to swiftly cool, the semiconductor wafers 16 are taken out from the extended tube 4 along with an auxiliary boat 18. |
