| 摘要 |
PURPOSE:To reduce wiring capacity as a whole without decreasing wiring resistance too much, by forming the cross sectional structure of a wiring layer so that a region, which is contacted with a basis insulator, is narrow and the width becomes wider toward the upper part. CONSTITUTION:The cross section of a wiring 9 is formed to that a part, which is contacted with an insulating film 6, is narrow and the width becomes wider toward the upper part. The uppermost part is made approximately equal to the size of a pattern. In forming the wiring, each element is formed on a semiconductor substrate 1, a first wiring layer 5 is formed and an interlayer insulating film 6 is formed thereon. The wiring metal 9 is deposited on the entire surface. Thereafter, a pattern is formed so that only a required part is made to remain by using an ordinary photolithography method. Thereafter the wiring metal 9 is scraped at a desired angle by using ion milling or a reactive ion beam. |
