| 摘要 |
PURPOSE:To make it possible to form an embedded structure by self-alignment, by overlapping a polarization photomask and a photomask, which is patterned by polarization films, which are crossed at a right angle, using the photomasks, turning either mask by 90 deg., and making it possible to select a light projected region. CONSTITUTION:Photomasks 5 are set in parallel with an Si substrate 1 at a separated position from the substrate 1. The first photomask 51 and the second photomask 52 are arranged so that the polarization film of either of the photomasks transmits only a P wave (b). Light is projected, and Al2(CH3)3 and Ar are made to flow between the substrate 1 and the masks 5. Al is deposited on a wiring-layer forming region 3, and an Al layer 4 is formed. Then the mask 51 is turned by 90 deg., and the light is projected so that only an S wave (c) is transmitted. Si2H6 and O2 are made to flow between the substrate 1 and the masks 5, and an SiO2 layer 2 is formed by depositing SiO2 on the field region on the substrate 1. |
