| 摘要 |
PURPOSE:To prevent short circuits with an electrode layer due to pinholes in a gate electrode at the outermost end caused by the difference in steps of a CVD oxide film in a double-gate structure, by providing a dummy gate electrode at the outside of the gate electrode at the outermost end. CONSTITUTION:A contact hole 13 is formed in a CVD oxide film 12, which covers a control gate 3 and a floating gate 2 of a semiconductor memory device in a double-gate structure. In this case, a dummy control gate 10 and a floating gate are formed at the outside of the control gate 3 and the floating gate 2 at the outermost end. Thereafter, a photoresist process of the contact hole 13 is performed. In this method, the flow of a photoresist layer 11 at the outside of the gate electrode 1 at the outermost end can be prevented. Therefore, pinholes caused by the thin photoresist layer 11 can be completely removed. |
